linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 5 10 353 - 0261 doc 201128 05/15/2014 rev#a 5 ecn# ls 3250 * features 6 lead sot - 23 surface mount package* tight matching 1 2mv excellent thermal tracking 1 3v/c absolute maximum ratings 2 @ 25 c (unless otherwise stated) maximum temperatures storage temperature - 5 5 to +150 c operating junction tempera ture - 55 to +150 c maximum power dissipation continuous power dissipation tbd maximum currents collector current 50ma maximum voltages collector to collector voltage 5 0v matching electrical characteristics @25 c (unless ot herwise stated) symbol characteristic ls3250a ls3250b LS3250C unit conditions min max min max min max base to emitter voltage differential 2 5 10 mv i c = 10 a , v ce = 5v base to emitter voltage dif ferential change with temperature 3 5 15 v/c i c = 10 a , v ce = 5v t a = - 40c to +85c base current differential 10 10 10 na i c = 10a, v ce = 5v base current differential change with temperature 0.5 0.5 1.0 na/c i c = 10a, v ce = 5v t a = - 40c to +85c current gain differential 10 10 15 % i c = 1 m a, v ce = 5v electrical characteristics @25 c (unless otherwise stated) symbol characteristic ls3250a ls3250b ls32 50c unit conditions min max min max min max bv cbo collector to base breakdown voltage 45 40 20 v i c = 10 a , i e = 0a bv ceo collector to emitter breakdown voltage 45 40 20 i c = 1 0 m a, i b = 0 bv cco collector to collector breakdown voltage 50 5 0 5 0 i c = 1a, i e = i b = 0 a bv ebo emitter to base breakdown voltage 3 6.0 6. 0 6. 0 i e = 10a, i c = 0a v ce(sat) collector to emitter saturation voltage 0.35 0.35 1.2 i c = 10ma, i b = 1ma ls3250 series monolithic dual npn transistors * sot - 23 top view to - 78 top view to - 71 top view pdip top view soic top view be2 be1 v v ? t v v be2 be1 ? b2 b1 i i ? t i i b2 b1 ? fe2 fe1 h h 1 3 2 sot-23 top view 6 4 5 c1 e1 c2 b1 e2 b2 1 2 3 4 8 7 6 5 pdip c1 b1 e1 nc c2 b2 e2 nc 1 2 3 4 8 7 6 5 soic c1 b1 e1 nc c2 b2 e2 nc
linear integrated systems ? 4042 clipper court ? fremont, ca 94538 ? tel: 510 490 - 9160 ? fax: 5 10 353 - 0261 doc 201128 05/15/2014 rev#a 5 ecn# ls 3250 electrical characteristics cont. @25 c (unless otherwise stated) symbol characteristic ls3250a ls3250b LS3250C unit conditions min max min max min max h fe dc current gain 150 100 50 i c = 1ma, v ce = 5v 1 5 0 650 80 40 i c = 10ma, v ce = 5v 1 25 6 0 3 0 i c = 35 ma, v ce = 5v i cbo collector cutoff current 0. 35 0.35 na i e = 0a, v cb = 30v 0.2 i e = 0a, v cb = 20v i ebo emitter cutoff current 0.35 0.35 0.35 i e = 0a, v cb = 3v i c1c2 collector to collector leakage current 1 1 1 a v cc = 50 v , i e = i b = 0a c obo outpu t capacitance 2 2 2 pf i e = 0a, v cb = 10v f t gain bandwidth product (current) 600 600 600 mhz i c = 1ma, v ce = 5v nf noise figure (narrow band) 3 3 3 db i c = 100a, v ce = 5v bw = 200hz r b = 10, f = 1khz notes 1. maximum rating for ls3250a, sot23 - 6. 2. absolute maximum ratings are limiting values above which serviceability may be impaired. 3. the reverse base to emitter voltage must never exceed 6. 0 volts. the reverse base to emitter current must never exceed 10a. information furnished by linear integrate d systems is believed to be accurate and reliable. however, no responsibility is assumed for its use; nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise unde r any patent or patent rights of linear integrated systems. * standa rd package is sot - 23 6 lead. other packages listed are optional. contact factory regarding availability of optional packages. * linear integrated systems (lis) is a 25 - year - old, third - generation precision semiconductor company providing hig h - quality discrete components. expertise brought to lis is based on processes and products developed at amelco, union carbide, intersil and micro power systems by c ompany president john h. hall. hall, a protg of silicon valley legend dr. jean hoerni, was the director of ic development at union carbide, co - founder and vice p re sident of r&d at intersil, and founder/p resident of micro power systems. sot - 23 to - 71 to - 78 pdip soic 1 3 5 sot-23 dimensions in millimeters 2 4 6 0.95 1.90 1.50 1.75 2.60 3.00 0.35 0.50 2.80 3.00 0.90 1.30 0.00 0.15 0.09 0.20 0.10 0.60 0.210 0.170 1 pdip dimensions in inches 2 3 4 5 6 7 8 0.145 0.170 0.060 0.100 0.250 0.375 0.038 0.295 0.320 1 soic 2 3 4 5 6 7 8 dimensions in inches 0.2284 0.2440 0.189 0.196 0.0075 0.0098 0.021 0.014 0.018 0.050 0.0040 0.0098 0.150 0.157
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